2SD2481 2003-02-04 1 toshiba transistor silicon npn epitaxial type (pct process) 2SD2481 pulse motor drive, hammer drive applications switching applications power amplifier applications high dc current gain: h fe = 4000 (min) (v ce = 2 v, i c = 150 ma) low saturation voltage: v ce (sat) = 1.5 v (max) (i c = 1 a, i b = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 10 v collector current i c 1.5 a base current i b 0.15 a collector power dissipation p c 1.3 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-8m1a weight: 0.55 g (typ.) base emitter collector
2SD2481 2003-02-04 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 30 v, i e = 0 D D 10 a emitter cut-off current i ebo v eb = 10 v, i c = 0 D D 10 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 30 D D v dc current gain h fe v ce = 2 v, i c = 150 ma 4000 D D collector-emitter saturation voltage v ce (sat) i c = 1 a, i b = 1 ma D 1.5 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 1 ma D 2.2 v turn-on time t on D 0.18 D storage time t stg D 0.6 D switching time fall time t f i b1 = ? i b2 = 1 ma, duty cycle 1% D 0.3 D s marking explanation of lot no. i b1 20 s input i b2 v cc 15 v output 15 ? i b1 i b2 month of manufacture (january to december are denoted by letters a to l respectively.) year of manufacture (last decimal digit of the year of manufacture) d2481 product no. lot no.
2SD2481 2003-02-04 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) base-emitter voltage v be (v) i c ? v be collector current i c (a) 0 0 0.2 1.0 0.4 0.8 1.6 2.4 common emitter v ce = 2 v ta = 100c 25 ? 50 1.2 2.0 0.4 0.6 0.8 h fe ? i c dc current gain h fe collector current i c (a) 0.002 300 500 3000 5000 10000 30000 0.01 0.03 0.1 0.3 1 1000 3 common emitter v ce = 2 v ta = 100c 25 ? 50 collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 0 0 100 4 6 300 200 400 500 1 2 3 5 i b = 10 a 20 common emitter ta = 25c 30 40 50 60 0 0 0 4 6 1 2 3 5 i b = 5 a 10 15 20 25 35 0 30 100 300 200 400 500 common emitter ta = 100c 0 0 4 6 1 2 3 5 i b = 20 a 40 60 80 100 0 120 140 160 100 300 200 400 500 common emitter ta = ? 50c 0.1 0.002 10 1 0.3 1 0.01 0.03 0.1 0.3 0.5 3 5 3 ta = ? 50c 100 25 common emitter i c /i b = 1000
2SD2481 2003-02-04 4 collector current i c (a) base-emitter saturation voltage v be (sat) (v) v be (sat) ? i c ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 0 0 0.2 0.8 1.4 25 50 100 125 175 75 150 0.4 1.0 1.6 0.6 1.2 30 0.002 0.1 1 0.1 3 2 0.3 0.01 0.03 0.3 0.5 1 5 10 common emitter i c /i b = 1000 ta = ? 50c 100 25 pulse width t w (s) r th ? t w transient thermal resistance r th (c/w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) 0.5 1 10 30 0.03 0.3 10 0.3 1 3 * : single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed) * v ceo max 1 ms * 10 ms * 100 ms * dc operation ta = 25c 0.1 50 3 5 0.001 1000 0.01 0.1 100 10 1 300 10 100 30 3 1 curves should be applied in thermal limited area. (single nonrepetitive pulse) ta = 25c
2SD2481 2003-02-04 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
|
